| PART |
Description |
Maker |
| NE9000 NE900000 NE900000G NE900075 NE900089A NE900 |
Ku-BAND MEDIUM POWER GaAs MESFET
|
NEC
|
| FLL177 FLL177ME |
L-BAND MEDIUM & HIGH POWER GAAS FET
|
Fujitsu Microelectronics
Fujitsu Limited
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| FLL300IL-1 FLL300IL-2 FLL300IL-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL400IP-2 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| FLU17XM |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| NE500199 NE500100 |
(NE500100 / NE500199) C-Band Medium Power GaAs MESFET
|
NEC Electronics
|
| FLL300IL-1 FLL300IL-2 |
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
|
Fujitsu Microelectronics
|
| MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY
L /S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
LS BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器，QFN封装
|
Mimix Broadband, Inc.
|
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPG2118K-E3 |
800 MHz - 2500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 4.15 X 4.15 MM, 0.90 MM HEIGHT, QFN-20
NECs 1.5W GaAs MMIC POWER AMPLIFIER
|
California Eastern Laboratories
NJR
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
